BAS19LT3 데이터 시트보기 (PDF) - ON Semiconductor

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BAS19LT3

HIGH VOLTAGE SWITCHING DIODE

ON Semiconductor 

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1

THERMAL CHARACTERISTICS (SOT−23)

Characteristic

Total Device Dissipation FR−5 Board

(Note 2)

TA = 25°C

Derate above 25°C

Thermal Resistance

Junction−to−Ambient (SOT−23)

Total Device Dissipation Alumina Substrate

(Note 3)

TA = 25°C

Derate above 25°C

Thermal Resistance Junction−to−Ambient

Junction and Storage

Temperature Range

THERMAL CHARACTERISTICS (SC−88A)

Characteristic

Power Dissipation (Note 4)

Thermal Resistance −

Junction−to−Ambient

Derate Above 25°C

Maximum Junction Temperature

Operating Junction and Storage Temperature Range

2. FR−5 = 1.0 0.75 0.062 in.

3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.

Symbol

PD

RqJA

PD

RqJA

TJ, Tstg

Max

225

1.8

556

300

2.4

417

−55 to +150

Symbol

PD

RqJA

TJmax

TJ, Tstg

Max

385

328

3.0

150

−55 to +150

Unit

mW

mW/°C

°C/W

mW

mW/°C

°C/W

°C

Unit

mW

°C/W

mW/°C

°C

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Reverse Voltage Leakage Current

(VR = 100 Vdc)

(VR = 150 Vdc)

(VR = 200 Vdc)

(VR = 100 Vdc, TJ = 150°C)

(VR = 150 Vdc, TJ = 150°C)

(VR = 200 Vdc, TJ = 150°C)

IR

BAS19

−

BAS20

−

BAS21

−

BAS19

−

BAS20

−

BAS21

−

Reverse Breakdown Voltage

(IBR = 100 mAdc)

(IBR = 100 mAdc)

(IBR = 100 mAdc)

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

V(BR)

BAS19

120

BAS20

200

BAS21

250

VF

−

−

Diode Capacitance (VR = 0, f = 1.0 MHz)

CD

−

Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)

trr

−

Max

Unit

mAdc

0.1

0.1

0.1

100

100

100

Vdc

−

−

−

Vdc

1.0

1.25

5.0

pF

50

ns

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