AT45DB321-TC 데이터 시트보기 (PDF) - Atmel Corporation
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AT45DB321-TC Datasheet PDF : 21 Pages
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DC Characteristics
Symbol
Parameter
Condition
Min
Typ
ISB
Standby Current
CS, RESET, WP = VIH, all inputs at
CMOS levels
3
ICC1
Active Current, Read Operation
f = 13 MHz; IOUT = 0 mA;
VCC = 3.6V
4
ICC2
Active Current, Program/Erase
Operation
VCC = 3.6V
30
ILI
Input Load Current
VIN = CMOS levels
ILO
Output Leakage Current
VI/O = CMOS levels
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 1.6 mA; VCC = 2.7V
VOH
Output High Voltage
IOH = -100 µA
2.0
VCC - 0.2V
Max
Units
10
µA
10
mA
40
mA
1
µA
1
µA
0.6
V
V
0.4
V
V
AC Characteristics
Symbol
fSCK
tWH
tWL
tCS
tCSS
tCSH
tCSB
tSU
tH
tHO
tDIS
tV
tXFR
tEP
tP
tPE
tBE
tRST
tREC
Parameter
SCK Frequency
SCK High Time
SCK Low Time
Minimum CS High Time
CS Setup Time
CS Hold Time
CS High to RDY/BUSY Low
Data In Setup Time
Data In Hold Time
Output Hold Time
Output Disable Time
Output Valid
Page to Buffer Transfer/Compare Time
Page Erase and Programming Time
Page Programming Time
Page Erase Time
Block Erase Time
RESET Pulse Width
RESET Recovery Time
Input Test Waveforms and Measurement Levels
AC
DRIVING
LEVELS
2.4V
0.45V
2.0 AC
MEASUREMENT
0.8 LEVEL
tR, tF < 5 ns (10% to 90%)
Min
Max
13
35
35
250
250
250
200
10
20
0
25
30
350
20
15
10
15
10
1
Output Test Load
DEVICE
UNDER
TEST
30 pF
Units
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
ms
ms
ms
µs
µs
8
AT45DB321
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