AP3602BKTR-E1 데이터 시트보기 (PDF) - BCD Semiconductor

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AP3602BKTR-E1

100mA REGULATED CHARGE PUMP

BCD Semiconductor 

100mA REGULATED CHARGE PUMP

Electrical Characteristics

(CFLY=1µF, CIN=COUT=10µF, TA=25oC, unless otherwise specified.)

For AP3602A

Data Sheet

AP3602A/B

Parameter

Input Voltage

Quiescent Current

Symbol

VIN

IQ

Conditions

VO=5V

VIN=2.7V to 5.0V, IO=0mA,

VSHDN =VIN, Not Switching

Min Typ Max Unit

2.7

VO

V

13

30

µA

Output Voltage

VO

2.7V<VIN<5V, IO≤50mA

3.0V<VIN<5V, IO≤100mA

4.8

5.0

5.2

V

4.8

5.0

5.2

Shutdown Supply Current

ISHDN

2.7V<VIN<3.6V, IO=0, VSHDN =0V

3.6V<VIN<5.0V, IO=0, VSHDN =0V

0.01

1

µA

2.5

Ripple Voltage

VRIPPLE

VIN=2.7V, IO=50mA

VIN=3V, IO=100mA

25

mVPP

30

Efficiency

η

VIN=2.7V, IO=50mA

92

%

Frequency

fOSC Oscillator free running

1.2

MHz

SHDN Input Threshold

High

VIH

SHDN Input Threshold

Low

VIL

1.4

V

0.3

SHDN Input Current High

SHDN Input Current Low

VOUT Turn-on Time

Short-Circuit Current

IIH

VSHDN =VIN

IIL

VSHDN =GND

tON

VIN=3V, IO=0mA

ISC

VIN=3V, VO=GND, VSHDN =3V

-1

1

µA

-1

1

0.2

ms

300

mA

Apr. 2007 Rev. 1. 2

BCD Semiconductor Manufacturing Limited

5

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