2SD1208 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SD1208

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter breakdown voltage IC=100mA ;IB=0

VCBO

Collector-base breakdown voltage

IC=100mA ;IE=0

VCEsat-1 Collector-emitter saturation voltage IC=0.5A ;IB=1mA

VCEsat-2 Collector-emitter saturation voltage IC=1A; IB=1mA

VBE

Base-emitter on voltage

IC=0.5A;VCE=5V

IEBO

Emitter cut-off current

VEB=6V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=5V

Product Specification

2SD1208

MIN TYP. MAX UNIT

45

75

V

45

75

V

1.5

V

2.5

V

1.8

V

0.1

mA

2000

20000

2

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