BU941 데이터 시트보기 (PDF) - Unisonic Technologies

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BU941

NPN SILICON TRANSISTOR

Unisonic Technologies 

BU941

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

VCES

500

V

Collector-Emitter Voltage

VCEO

400

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

15

A

Collector Peak Current

ICM

30

A

Base Current

IB

1

A

Base Peak Current

IBM

5

W

TO-3P

155

W

Total Power Dissipation (Tc=25°C)

TO-220

PD

150

W

TO-263

65

W

Junction Temperature

Storage Temperature

TJ

+175

°C

TSTG

-65 ~ +175

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Emitter Sustaining

Ic=100mA, Vclamp=400V, L=10mH

Voltage

VCEO(SUS)* (see Fig. 1)

400

V

Collector Cut-Off Current

ICES

VCE=500V, VBE=0

VCE=500V, VBE=0, TJ=125°C

100 µA

0.5 mA

Collector Cut-Off Current

ICEO

VCE=450V, IB=0

VCE=450V, IB=0, TJ=125°C

100 µA

0.5 mA

Emitter Cut-off Current

IEBO VEB=5V, Ic=0

20 mA

Collector-Emitter Saturation

Voltage

IC=8A, IB=100mA

VCE(SAT)* IC=10A, IB=250mA

IC=12A, IB=300mA

1.6

1.8

V

2

Base-Emitter Saturation Voltage

IC=8A, IB=100mA

VBE(SAT)* IC=10A, IB=250mA

IC=12A, IB=300mA

2.2

2.5

V

2.7

DC Current Gain

hFE* VCE=10V, Ic=5A

300

Diode Forward Voltage

VF

IF=10A

2.5

V

Functional Test

VCC=24V, Vclamp=400V, L=7mH

10

A

(see Functional Test Circuit)

Fall Time

Storage Time

tF

VCC=12V, Vclamp=300V, VBE=0,

15

ts

RBE=47Ω, L=7mH, Ic=7A, IB=70mA

(see Fig.2)

0.5

µs

*Pulsed: Pulse duration=300µs, duty cycle 1.5%

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R203-025,B

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