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CMT07N60FP Datasheet PDF : 7 Pages
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CMT07N60
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
CMT07N60
CMT07N60FP
Package
TO-220
TO-220 Full Pak
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125℃)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) *
Forward Transconductance (VDS = 40 V, ID = 3.5A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 7.0 A,
VGS = 10 V,
RG = 9.1Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 480 V, ID = 7.0 A,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS =7.0 A,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
CMT07N60
Min
Typ
Max
600
100
100
100
100
2.0
4.0
1.2
4.0
1380
1800
115
150
23
30
30
70
80
170
125
260
85
180
38
50
6.4
15
4.5
7.5
Units
V
μA
nA
nA
V
Ω
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
VSD
1.4
V
ton
**
ns
trr
415
ns
2003/06/19 Preliminary Rev. 1.0 Champion Microelectronic Corporation
Page 2
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