P3C1256-12JC 데이터 시트보기 (PDF) - Performance Semiconductor
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P3C1256-12JC Datasheet PDF : 8 Pages
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CAPACITANCES
(VCC = 5.0V, TA = 25°C, f = 1.0 MHz)
Symbol
Parameter
C
IN
COUT
Input Capacitance
Output Capacitance
Test Conditions
V = 0V
IN
V = 0V
OUT
Max
10
10
P3C1256
Unit
pF
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
I
CC
Parameter
Dynamic Operating Current
Temperature
Test
Range Conditions -12 -15 -20 -25
Unit
Commercial
Industrial
*
110 100 95 90 mA
*
N/A 115 110 105 mA
*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e., CE, and WE ≤ VIL (max), OE is high. Switching inputs are 0V
and 3V.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
Parameter
tRC
Read Cycle Time
-12
-15
-20
-25
Unit
Min Max Min Max Min Max Min Max
12
15
20
25
ns
tAA Address Access Time
12
15
20
25
ns
tAC
Chip Enable Access
12
15
20
25
ns
Time
tOH Output Hold from
2
2
2
2
ns
Address Change
tLZ
Chip Enable to
2
2
2
2
ns
Output in Low Z
tHZ
Chip Disable to
Output in High Z
7
8
9
10
ns
tOE Output Enable Low
7
9
11
12
ns
to Data Valid
tOLZ Output Enable Low
0
0
0
0
ns
to Low Z
t
Output Enable High
6
7
OHZ
to High Z
9
10
ns
tPU
Chip Enable to
0
0
0
0
ns
Power Up Time
t
Chip Disable to
PD
Power Down Time
12
15
20
20
ns
135
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