13007 데이터 시트보기 (PDF) - ON Semiconductor

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13007

SWITCHMODE™ NPN Bipolar Power Transistor for Switching Power Supply Applications

ON Semiconductor 

MJE13007

Table 1. Test Conditions For Dynamic Performance

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

+15Ă

V 1 µF

150ĂΩ

3ĂW

MPF930

+10ĂV

COMMON

Voff

50ĂΩ

500 µF

100ĂΩ

3ĂW

MPF930

MTP8P10

MTP8P10

MUR105 RB1

MJE210

RB2

150ĂΩ

3ĂW

MTP12N10

100 µF

VCC

L

MUR8100E

A

IB

IB

IC

Vclamp = 300 Vdc

5.1 k

TUT

VCE

51

1 µF

RESISTIVE

SWITCHING

+125

V

RC

RB TUT

SCOPE

D

1

-Ă4 V

IC

ICM

t1

VCE

VCEM

TIME

V(BR)CEO(sus)

L = 10 mH

RB2 = 8

VCC = 20 Volts

IC(pk) = 100 mA

Inductive

Switching

L = 200 mH

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

RBSOA

L = 500 mH

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired IB1

tf CLAMPED

tf UNCLAMPED ≈ t2

t

tf

Vclamp

t

t2

t1 ADJUSTED TO

OBTAIN IC

t1 ≈

Lcoil (ICM)

VCC

t2 ≈

Lcoil (ICM)

Vclamp

TEST EQUIPMENT

SCOPE Ċ TEKTRONIX

475 OR EQUIVALENT

TYPICAL

WAVE-

FORMS

VCE PEAK

VCE

IB1

IB

IB2

VCC = 125 V

RC = 25 Ω

D1 = 1N5820 OR

EQUIV.

+11 V

25 µs

0

9V

tr, tf < 10 ns

DUTY CYCLE = 1.0%

RB AND RC ADJUSTED

FOR DESIRED IB AND IC

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