BTS949(2000) 데이터 시트보기 (PDF) - Infineon Technologies
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BTS949 Datasheet PDF : 11 Pages
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Electrical Characteristics
Parameter
at Tj=25°C, unless otherwise specified
Characteristics
Initial peak short circuit current limit
VIN = 10 V, VDS = 12 V
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C, without RCC
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C, RCC = 0 Ω
Dynamic Characteristics
Turn-on time VIN to 90% ID:
RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time VIN to 10% ID:
RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions
Thermal overload trip temperature
Unclamped single pulse inductive energy
ID = 19 A, Tj = 25 °C, Vbb = 32 V
ID = 19 A, Tj = 150 °C, Vbb = 32 V
Inverse Diode
Inverse diode forward voltage
IF = 5*19A, tm = 300 µS, VIN = 0 V
BTS 949
Symbol
Values
Unit
min. typ. max.
ID(SCp)
-
175
-A
ID(lim)
9.5 19 40
150 220 270
ton
-
toff
-
-dVDS/dton
-
dVDS/dtoff
-
40 100 µs
70 170
1
3 V/µs
1
3
Tjt
150 165
- °C
EAS
mJ
6000 -
-
1800 -
-
VSD
-
1,1
-V
1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Page 4
07.06.2000
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