FQS4410 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQS4410 Datasheet PDF : 8 Pages
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Typical Characteristics
VGS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
101
Bottom : 3.0 V
100
10-1
※ Note :
1. 250μs Pulse Test
2. TC = 25℃
100
V , Drain-Source Voltage [V]
DS
Figure 1. Output Characteristics
101
150℃
25℃
100
10-1
2.0
-55℃
※ Note
1. VDS = 10V
2. 250μs Pulse Test
2.5
3.0
3.5
4.0
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
40
30
V = 4.5V
GS
VGS = 10V
20
10
※ Note : TJ = 25℃
0
0
10
20
30
40
50
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current
101
100
10-1
0.2
150℃
25℃
※ Note :
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Source-Drain Diode Forward Voltage
3000
2500
2000
1500
1000
500
C
oss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
Crss = Cgd
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance vs. Drain-Source Voltage
12
10
VDS = 15V
VDS = 24V
8
6
4
2
※ Note : ID = 10A
0
0
5
10
15
20
25
30
35
40
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge vs. Gate-Source Voltage
©2000 Fairchild Semiconductor International
Rev. A, May 2000
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