NTE2412 데이터 시트보기 (PDF) - NTE Electronics
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NTE2412 Datasheet PDF : 2 Pages
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NTE2412
Silicon NPN Transistor
General Purpose, High Voltage Amp,
(Compl to NTE2413)
Description:
The NTE2412 is a silicon NPN transistor in an SOT–23 type surface mount package designed for use
primarily in telephone and professional communication equipment.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
fT
IC = 50µA
IC = 100µA
IE = 50µA
VCB = 200V
VEB = 4V
IC = 50mA, IB = 5mA
VCE = 10V, IC = 10mA
VCE = 30V, IE = 10mA,
f = 100MHz
Capacitance
Cob VCB = 30V, IE = 0, f = 1MHz
Min Typ Max Unit
300 – – V
300 – – V
5––V
– – 0.5 µA
– – 0.5 µA
– – 2.0 V
56 – 120
50 100 – MHz
– 3 – pF
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