IXTP3N120 데이터 시트보기 (PDF) - IXYS CORPORATION

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IXTP3N120

High Voltage Power MOSFETs

IXYS CORPORATION 

12

10

VDS = 600V

ID = 1.5A

8

6

4

2

0

0 10 20 30 40 50 60

Gate Charge - nC

Fig. 7 Gate Charge Characteristic Curve

5

VGS = 0V

4

3

TJ = 125OC

TJ = 25OC

2

1

0

0.2

0.4

0.6

0.8

1.0

VSD - Volts

Fig. 9 Drain Current vs Drain to Source Voltage

1.00

IXTA/IXTP 3N120

IXTA/IXTP 3N110

1000

Ciss

f = 1MHz

Coss

100

Crss

10

0 5 10 15 20 25 30 35 40

VDS - Volts

Fig.8 Capacitance Curves

0.10

Single Pulse

0.01

0.00

10-4

10-3

10-2

10-1

100

101

Pulse Width - Seconds

Fig.10 Transient Thermal Impedance

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

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