74VHCT03A(2001) 데이터 시트보기 (PDF) - STMicroelectronics
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74VHCT03A Datasheet PDF : 7 Pages
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74VHCT03A
DC SPECIFICATIONS
Symb ol
Parameter
VIH High Level Input
Voltage
VIL Low Level Input
Voltage
VOL Low Level Output
Voltage
IOZ High Impedance
Output Leakage
Current
II Input Leakage Current
ICC Quiescent Supply
Current
∆ICC Additional Worst Case
Supply Current
Test Conditions
V CC
( V)
4.5 to 5.5
4.5 to 5.5
4.5
IO=50 µA
4.5
IO=8 mA
VI = VIH or VIL
5 .5
VO = 0V to 5.5V
0 to 5.5
5.5
VI = 5.5V or GND
VI = VCC or GND
5.5
One Input at 3.4V,
other input at VCC or
GND
Value
TA = 25 oC
Min. Typ. Max.
2
-40 to 85 oC
Min . Max.
2
0.8
0.8
0.0 0.1
0.1
0.36
0.44
±0.25
±2.5
±0.1
±1.0
2
20
1.35
1.5
Un it
V
V
V
µA
µA
µA
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns)
Symb ol
Parameter
tPZL Propagation Delay
Time
tPLZ Propagation Delay
Time
(*) Voltage range is 5V ± 0.5V
Test Condition
VCC (*) CL
( V)
(pF)
5.0
15
5.0
50
5.0
50
Value
TA = 25 oC
Min. Typ. Max.
3.9 5.1
4.4 5.7
7.5 9.8
-40 to 85 oC
Min . Max.
1.0 6.0
1.0 6.6
1.0 11.3
Unit
ns
ns
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
Test Conditions
Value
TA = 25 oC
Min. Typ. Max.
-40 to 85 oC
Min . Max.
Un it
CIN Input Capacitance
5.8 10
10
pF
COUT Output Capacitance
8.8
pF
CPD Power Dissipation
6
pF
Capacitance (note 1)
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/4 (per Gate)
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