Philips Semiconductors
Programmable unijunction transistor/
Silicon controlled switch
Product specification
BRY39
SYMBOL
PARAMETER
SWITCHING TIMES
ton
turn-on time
toff
turn-off time
Programmable unijunction transistor
Ip
peak point current
Iv
valley point current
Voffset
IGAO
IGKS
VAK
VOM
tr
offset voltage
gate-anode leakage current
gate-cathode leakage current
anode-cathode voltage
peak output voltage
rise time
CONDITIONS
MIN. MAX. UNIT
VKG-K = −0.5 to 4.5 V; RKG-K = 1 kΩ; −
see Figs 15 and 16
VKG-K = −0.5 to 0.5 V; RKG-K = 10 kΩ −
RKG-K = 10 kΩ; see Figs 17 and 18 −
VS = 10 V; RG = 10 kΩ;
−
see Figs 3 and 8
VS = 10 V; RG = 100 kΩ;
−
see Figs 3 and 8
VS = 10 V; RG = 10 kΩ;
−
see Figs 3 and 8
VS = 10 V; RG = 100 kΩ;
−
see Figs 3 and 8
typical curve; IA = 0; for VP and VS −
see Fig.8
IK = 0; VGA = 70 V
−
VAK = 0; VKG = 70 V
−
IA = 100 mA
−
VAA = 20 V; C = 10 nF;
6
see Figs 9 and 11
VAA = 20 V; C = 10 nF; see Fig.11 −
0.25
µs
1.5
µs
15
µs
0.2
µA
0.06
µA
2
µA
1
µA
−
V
10
nA
100
nA
1.4
V
−
V
80
ns
Explanation of symbols
For application of the BRY39 as a programmable
unijunction transistor, only the anode gate is used. To
simplify the symbols, the term gate instead of anode gate
will be used (see Fig.2).
handbook, halfpage
anode
a
g
gate
k
cathode MBB700
Fig.2 Programmable unijunction transistor
explanation of symbols.
1997 Jul 24
5