TIP30G(2011) 데이터 시트보기 (PDF) - ON Semiconductor
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TIP30G Datasheet PDF : 5 Pages
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TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2)
VCEO(sus)
Vdc
TIP29, TIP30
40
−
TIP29A, TIP30A
60
−
TIP29B, TIP30B
80
−
TIP29C, TIP30C
100
−
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
TIP29, TIP29A, TIP30, TIP30A
TIP29B, TIP29C, TIP30B, TIP30C
TIP29, TIP30
TIP29A, TIP30A
TIP29B, TIP30B
TIP29C, TIP30C
ICEO
ICES
mAdc
−
0.3
−
0.3
mAdc
−
200
−
200
−
200
−
200
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)
Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3)
(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%
3. fT = ⎪hfe⎪• ftest
IEBO
−
1.0
mAdc
hFE
40
−
−
15
75
VCE(sat)
−
0.7
Vdc
VBE(on)
−
1.3
Vdc
fT
3.0
−
MHz
hfe
20
−
−
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