
Diodes Incorporated.
Features and Benefits
NPN Transistor
• BVCEO > 50V
• IC = 4A Continuous Collector Current
• Low Saturation Voltage (100mV max @ 1A)
• RSAT = 68mΩ for a low equivalent On-Resistance
PNP Transistor
• BVCEO > -40V
• IC = -3A Continuous Collector Current
• Low Saturation Voltage (-220mV max @ -1A)
• RSAT = 104mΩ for a low equivalent On-Resistance
• hFE characterized up to 6A for high current gain hold up
• Low profile 0.8mm high package for thin applications
• RθJA efficient, 40% lower than SOT26
• 6mm2 footprint, 50% smaller than TSOP6 and SOT26
• Lead-Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
APPLICATIONs
• DC – DC Converters
• Charging circuits
• Power switches
• Motor control
• CCFL Backlighting circuits
• Portable applications