ZXT10N50DE6(2015) データシート - Diodes Incorporated.
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Diodes Incorporated.
50V NPN LOW SATURATION SWITCHING TRANSISTOR
FEATUREs
• BVCEO > 50V
• IC = 3A Continuous Collector Current
• ICM = 6A Peak Pulse Current
• RCE(SAT) = 75mΩ for a Low Equivalent On-Resistance
• Low Saturation Voltage (200mV Max @ 1A)
• hFE Characterized up to 6A
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
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50V NPN LOW SATURATION SWITCHING TRANSISTOR
Diodes Incorporated.
DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR ( Rev : 2010 )
Diodes Incorporated.
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ( Rev : 1999 )
Diodes Incorporated.
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Diodes Incorporated.
DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR
Diodes Incorporated.
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Zetex => Diodes
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Zetex => Diodes
50V NPN LOW SATURATION TRANSISTOR ( Rev : 2014 )
Diodes Incorporated.
50V NPN LOW SATURATION TRANSISTOR ( Rev : 2010 )
Diodes Incorporated.
50V NPN LOW SATURATION TRANSISTOR
Zetex => Diodes