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WFU2N60B データシート - Shenzhen Winsemi Microelectronics Co., Ltd

WFU2N60B image

部品番号
WFU2N60B

コンポーネント説明

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page
7 Pages

File Size
542.3 kB

メーカー
WINSEMI
Shenzhen Winsemi Microelectronics Co., Ltd 

General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply .


FEATUREs
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 9nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)

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