General Description
   This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp ballast.

FEATUREs
◾ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V
◾ Ultra-low Gate Charge(Typical 59nC)
◾ Fast Switching Capability
◾ 100%Avalanche Tested
◾ Maximum Junction Temperature Range(150℃)