General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast.

FEATUREs
4A, 600V, RDS(on) (Max 2.5Ω)@VGS=10V
Ultra-low Gate Charge (Typical 16nC)
Fast Switching Capability
100% Avalanche Tested
Isolation Voltage (VISO = 4000VAC)
Maximum Junction Temperature Range (150℃)