W20NM50 データシート - STMicroelectronics
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STMicroelectronics

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

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N-CHANNEL 550V @ Tjmax - 0.08Ω - 48A ISOTOP MDmesh™ MOSFET
STMicroelectronics
N-CHANNEL 550V @ Tjmax - 0.065Ω - 45A TO-247 MDmesh™ MOSFET ( Rev : 2004 )
STMicroelectronics
N-CHANNEL 550V @ Tjmax - 0.08Ω - 45A TO-247 MDmesh™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-CHANNEL 550V @ Tjmax - 0.32Ω - 14A TO-247 MDmesh™ MOSFET
STMicroelectronics
N-CHANNEL 550V @ Tjmax- 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh™ MOSFET
STMicroelectronics
N-CHANNEL 550V - 1.2Ω - 5.2A PowerFLAT™ Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronics
N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET
STMicroelectronics
N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET
STMicroelectronics
N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK Zener-Protected SuperMESH™ MOSFET
STMicroelectronics
N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK Zener-Protected SuperMESH™ MOSFET
STMicroelectronics