VT2080S(2017) データシート - Vishay Semiconductors
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Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
Trench MOS Barrier Schottky Rectifier
( Rev : V2 )
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
( Rev : B14 )
TSC Corporation
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD