VS-GB90SA120U データシート - Vishay Semiconductors
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Vishay Semiconductors
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BenefitS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
International Rectifier
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A ( Rev : 2010 )
Vishay Semiconductors
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT ( Rev : 2004 )
International Rectifier
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A ( Rev : 2017 )
Vishay Semiconductors
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT ( Rev : 2004 )
International Rectifier