VS-GA200SA60UP データシート - Vishay Semiconductors
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Vishay Semiconductors
FEATURES
• Ultrafast: optimized for minimum saturation
voltage and speed up to 30 kHz in hard
switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package (2500 VAC/RMS)
• Very low internal inductance (≤ 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BenefitS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies = 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A ( Rev : 2017 )
Vishay Semiconductors
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT ( Rev : 2004 )
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT ( Rev : 2002 )
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier