部品番号
VFT4045BP
Other PDF
PDF
page
4 Pages
File Size
122.8 kB
メーカー
Vishay Semiconductors
VFT4045BP データシート - Vishay Semiconductors
Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
部品番号
コンポーネント説明
ビュー
メーカー
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2013 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2013 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2012 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2010 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2013 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2012 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2015 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2018 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Vishay Semiconductors
Share Link: 