部品番号
VBT1045BP-E3
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Vishay Semiconductors
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VBT1045BP-E3 データシート - Vishay Semiconductors
Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Compliant to RoHS Directive 2011/65/EU
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
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