V35PW12 データシート - Vishay Semiconductors
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Vishay Semiconductors
Ultra Low VF = 0.40 V at IF = 5 A
FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
( Rev : 2013 )
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors