V30D45CHM3/I(2013) データシート - Vishay Semiconductors
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Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2018 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
Vishay Semiconductors