High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.26 V at IF = 5 A

FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
   260 °C
• Material categorization: For definitions of compliance
   please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
   For use in low voltage high frequency DC/DC converters,
   freewheeling, and polarity protection applications.