DESCRIPTION
The UPA806T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications.

FEATURES
• SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz
• HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz
• HIGH GAIN BANDWIDTH: fT = 12 GHz
• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE