UPA1819 データシート - NEC => Renesas Technology
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NEC => Renesas Technology
DESCRIPTION
The µ PA1819 is a switching device that can be driven directly by a 4.0 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on.
FEATURES
• 4.0 V drive available
• Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −6.0 A)
RDS(on)2 = 18.5 mΩ MAX. (VGS = −4.5 V, ID = −6.0 A)
RDS(on)3 = 22 mΩ MAX. (VGS = −4.0 V, ID = −6.0 A)
• Built-in G-S protection diode against ESD
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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology