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UPA1819 データシート - NEC => Renesas Technology

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部品番号
UPA1819

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8 Pages

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71.9 kB

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NEC
NEC => Renesas Technology 

DESCRIPTION
The µ PA1819 is a switching device that can be driven directly by a 4.0 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on.


FEATURES
• 4.0 V drive available
• Low on-state resistance
    RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −6.0 A)
    RDS(on)2 = 18.5 mΩ MAX. (VGS = −4.5 V, ID = −6.0 A)
    RDS(on)3 = 22 mΩ MAX. (VGS = −4.0 V, ID = −6.0 A)
• Built-in G-S protection diode against ESD

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部品番号
コンポーネント説明
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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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