UPA1731G-E1 データシート - NEC => Renesas Technology
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NEC => Renesas Technology
DESCRIPTION
The µPA1731 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
FEATURES
• Low on-resistance
RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A)
RDS(on)2 = 14.6 mΩ TYP. (VGS = –4.5 V, ID = –5.0 A)
RDS(on)3 = 16.5 mΩ TYP. (VGS = –4.0 V, ID = –5.0 A)
• Low Ciss : Ciss =2600 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
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SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology