UPA1701A データシート - NEC => Renesas Technology
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NEC => Renesas Technology
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application.
FEATURES
• 2.5 V gate drive and low on-resistance
RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A)
RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)
• Low Ciss : Ciss = 1040 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology