DESCRIPTION
TSTS7100 is an infrared, 950 nm emitting diode in GaAs technology in a hermetically sealed TO-18 package with lens.

FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): ∅ 4.7
• Peak wavelength: λp = 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 5°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
   RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
• Radiation source in near infrared range