TSML1000(2011) データシート - Vishay Semiconductors
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Vishay Semiconductors
DESCRIPTION
TSML1000 is an infrared, 940 nm emitting diode in GaAlAs/GaAs with high radiant power molded in a clear, untinted plastic package (with lens) for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: GW, RGW, yoke, axial
• Dimensions (L x W x H in mm): 2.5 x 2 x 2.7
• Peak wavelength: p = 940 nm
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Versatile terminal configurations
• Package matches with detector TEMT1000
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC
APPLICATIONS
• For remote control
• Punched tape readers
• Encoder
• Photointerrupters
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High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs ( Rev : 2008 )
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs ( Rev : 2008 )
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs ( Rev : 2008 )
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs ( Rev : 2008 )
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs ( Rev : 2008 )
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs ( Rev : 2008 )
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs ( Rev : 2008 )
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs ( Rev : 2008 )
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs ( Rev : 2008 )
Vishay Semiconductors