datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  Vishay Semiconductors  >>> TSHA5200 PDF

TSHA5200(2011) データシート - Vishay Semiconductors

TSHA5200 image

部品番号
TSHA5200

コンポーネント説明

Other PDF
  2008   2009   lastest PDF  

PDF
DOWNLOAD     

page
5 Pages

File Size
101 kB

メーカー
Vishay
Vishay Semiconductors 

DESCRIPTION
The TSHA520. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.


FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Compliant to RoHS Directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC


APPLICATIONS
• Infrared remote control and free air data transmission
   systems
• This emitter series is dedicated to systems with panes in
   transmission space between emitter and detector,
   because of the low absorbtion of 875 nm radiation in glass


部品番号
コンポーネント説明
ビュー
メーカー
Infrared Emitting Diode, 875 nm, GaAlAs ( Rev : 2011 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs ( Rev : 2014 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs ( Rev : 2009 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs ( Rev : 2011 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
PDF
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs ( Rev : 2009 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs ( Rev : 2008 )
PDF
Vishay Semiconductors

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]