DESCRIPTION
TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λp = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching to Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS
• Infrared video data transmission between camcorder and
   TV set
• Free air data transmission systems with high modulation
   frequencies or high data transmission rate requirements