TS9414VB データシート - Vishay Semiconductors
メーカー

Vishay Semiconductors
DESCRIPTION
TS9414VB is a high power infrared, 940 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”.
FEATURES
• Package type: chip
• Package form: single chip
• Technology: surface emitter
• Dimensions chip (L x W x H in mm):
0.355 x 0.355 x 0.17
• Peak wavelength: λ = 940 nm
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2017 )
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2012 )
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2012 )
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2017 )
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors