DESCRIPTION
TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”.

FEATURES
• Package type: chip
• Package form: single chip
• Technology: surface emitter
• Dimensions chip (L x W x H in mm):
   0.355 x 0.355 x 0.17
• Peak wavelength: λ = 855 nm
• Material categorization:
   for definitions of compliance please see
   www.vishay.com/doc?99912