TPCS8214(2007) データシート - Toshiba
メーカー

Toshiba
Lithium Ion Battery Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.)
• High forward transfer admittance: |Yfs| = 10S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 0.5~1.4 V (VDS = 10 V, ID = 200μ A)
• Common drain
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (U−MOS) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) ( Rev : 2010 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) ( Rev : 2003 )
Toshiba