TPCP8103-H データシート - Toshiba
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Toshiba
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
CCFL Inverter Applications
• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: QSW = 6.5 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 31 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 10 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −40V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) ( Rev : 2004 )
Toshiba