部品番号
TPC8110
Other PDF
PDF
page
7 Pages
File Size
209.4 kB
メーカー
Toshiba
TPC8110(2010) データシート - Toshiba
Toshiba
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 16 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −40 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
部品番号
コンポーネント説明
ビュー
メーカー
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) ( Rev : 2009 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOS III) ( Rev : V2 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOS III) ( Rev : 2006 )
Toshiba
Share Link: 