TPC8035-H データシート - Toshiba
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Toshiba
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• High-speed switching
• Small gate charge: QSW = 17 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 2.3 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 70 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ -H) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ -H) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ -H) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ -H)
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H)
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H) ( Rev : 2010 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ -H) ( Rev : 2008 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ -H)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ -H)
Toshiba