TK50S04K3L(2012) データシート - Toshiba
メーカー

Toshiba
Features
(1) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(3) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
APPLICATIONs
• Automotive
• Motor Drivers
• DC-DC Converters
• Switching Voltage Regulators
MOSFETs Silicon N-channel MOS (U-MOSIV)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSIV)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSIV) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSIV)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSIV)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSIV)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSIV) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSIV) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSIV)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSIV)
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