TK19J55D データシート - Toshiba
メーカー

Toshiba
Features
(1) Low ON resistance. : RDS(ON) = 0.28 Ω (typical)
(2) High forward transfer admittance. : |Yfs| = 8.5 S (typical)
(3) Low leakage current. : IDSS = 10 µA (max) (VDS = 550 V)
(4) Easy-to-handle enhancement type. : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
APPLICATIONs
• • Switching Voltage Regulators
MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba