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TK10A50D データシート - Toshiba

K10A50D image

部品番号
TK10A50D

コンポーネント説明
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

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Toshiba
Toshiba 

TK10A50D

 

Official Site : //www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en
 

•  Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)


•  High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)


•  Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)


•  Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

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