TIP35AB データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
• DC Current Gain-
: hFE= 25(Min)@IC = 1.5A
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for use in general purpose power amplifier and
switching applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor