TIP105 データシート - Samsung
メーカー
Samsung
HGIH DC CURRENT GAIN MIN hFE=1000 @ VCE=-4V, Ic=-3A
COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE
Complementary to TIP100/101/102
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PNP Epitaxial Silicon Darlington Transistor ( Rev : 2008 )
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PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR
Samsung
PNP Epitaxial Silicon Darlington Transistor
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PNP Epitaxial Silicon Darlington Transistor
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