TIM1011-4L データシート - Toshiba
メーカー

Toshiba
FEATURES
■ HIGH POWER
P1dB=36.5dBm at 10.7GHz to 11.7GHz
■ HIGH GAIN
G1dB=7.5dB at 10.7GHz to 11.7GHz
■ BROAD BAND INTERNALLY MATCHED FET
■ HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET ( Rev : V2 )
MITSUBISHI ELECTRIC
MICROWAVE POWER GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba
Microwave Power GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba