TIM0910-5 データシート - Toshiba
メーカー

Toshiba
FEATURES
◾ HIGH POWER
P1dB=37.5dBm at 9.5GHz to 10.5GHz
◾ HIGH GAIN
G1dB=7.0dB at 9.5GHz to 10.5GHz
◾ BROAD BAND INTERNALLY MATCHED
◾ HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET ( Rev : V2 )
MITSUBISHI ELECTRIC
MICROWAVE POWER GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba
Microwave Power GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba
MICROWAVE POWER GaAs FET
Toshiba